leshan radio com p an y , ltd. lbss139wt1g 200 mamps 5 0 vo l ts r ds(on) = 3 .5 n - channel devic e packag e shipping orderin g inform a tion lbss139wt1g sc-70 300 0 t ape & reel j2 = device code m = month code markin g diagram & pin assignment power mosfet 200 mamps, 50 volts nchannel sc70 t ypica l applications are dc?dc converters, power management in portabl e and battery?powered products such as computers, printers, pcmci a cards, cellular and cordless telephones. ? low threshold v oltage (v gs(th ) : 0.5 v ...1.5v) makes it ideal for low voltage applications ? miniature sc?70 surface mount package saves board space symbol value unit draintosource voltage v dss 50 vdc gatetosource voltage continuous v gs 20 vdc drain current continuous @ t a = 2 5 c pulsed drain current (t p 10 m s) i d i dm 200 800 ma total power dissipation @ t a = 25 c p d 150 mw operating and storage temperature range t j , t stg 55 to 150 c thermal resistance junctiontoambient r q ja 833 c/w maximum lead temperature for soldering purposes, for 10 seconds t l 260 c rating maximum ratings (t a = 25 o c unless otherwise noted) ? pb?fre e package may be a vailable. the g?su f fix denotes a pb?free lead finish lbss139wt3g 1000 0 t ape & reel j2 m ? esd protected:1500v g d s 1 2 3 sot?323 / sc ? 70 sc-70 1 3 2 rev .a 1/6
leshan radio company, ltd. lbss139wt1g electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics draintosource breakdown voltage (v g s = 0 vdc, i d = 250 m adc) v (br)dss 50 vdc zero gate voltage drain current (v d s = 25 vdc, v g s = 0 vdc) (v d s = 50 vdc, v g s = 0 vdc) i dss 0.1 0.5 m adc gatesource leakage current (v g s = 20 vdc, v d s = 0 vdc) i gss 10 m adc on characteristics (note 1.) gatesource threshold voltage (v d s = v g s , i d = 1.0 madc) v gs(th) 0.5 1.5 vdc static draintosource onresistance (v g s = 2.75 vdc, i d < 200 madc, t a = 4 0 c to +85 c) (v g s = 5.0 vdc, i d = 200 madc) r ds(on) 5.6 10 3.5 ohms forward transconductance (v d s = 25 vdc, i d = 200 madc, f = 1.0 khz) g fs 100 mmhos dynamic characteristics input capacitance (v d s = 25 vdc, v g s = 0, f = 1 mhz) c iss pf output capacitance (v d s = 25 vdc, v g s = 0, f = 1 mhz) c o s s transfer capacitance (v dg = 25 vdc, v g s = 0, f = 1 mhz) c rss switching characteristics (note 2.) turnon delay time (v t d(on) ns turnoff delay time (v ds = 30 vdc, i ds = 0.5 adc,) t d(o f f) 1. pulse test: pulse width 300 m s, duty cycle 2%. 2. switching characteristics are independent of operating junction temperature. rev .a 2/6 22.8 3.5 2.9 3.8 19
leshan radio company, ltd. lbss139wt1g typical electrical characteristics rev .a 3/6 output characteristics drain-source on resistance i d - drain current (a) r ds(on) - on resistance ( ) v ds - drain-source voltage (v) i d - drain current (a) transfer characteristics gate threshold voltage r ds(on) - on resistance ( ) normalized threshold voltage v gs - gate-source voltage (v) t j - junction temperature (c) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0.0 0.2 0.4 0.6 0.8 1.0 3.0 v v gs = 4,5,6,8,10 v 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 v gs = 4.5v v gs = 10 v -50 -25 0 25 50 75 100 125 150 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 i ds = 250 a 12345678910 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 i d = 0.5 a
leshan radio company, ltd. lbss139wt1g typical electrical characteristics rev .a 4/6 drain-source on resistance source-drain diode forward normalized on resistance i s - source current (a) t j - junction temperature (c) v sd - source-drain voltage (v) capacitance gate charge c - capacitance (pf) v gs - gate-source voltage (v) v ds - drain-source voltage (v) q g - gate charge (pc) -50 -25 0 25 50 75 100 125 150 0.8 1.0 1.2 1.4 1.6 r on @t j = 25 o c: 1.2 v gs = 10 v i d = 0.5 a 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0.1 1 2 t j = 150 o c t j =25 o c 0 5 10 15 20 25 30 0 5 10 15 20 25 30 35 40 frequency = 1 mhz crss coss ciss 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 v ds = 10 v i ds = 0.5 a
leshan radio company, ltd. lbss139wt1g typical electrical characteristics rev .a 5/6 drain-source on resistance drain-source on resistance normalized on resistance r ds(on) ? on resistance ( ) t j - junction temperature (c) i d - drain current (a) drain-source on resistance r ds(on) ? on resistance ( ) i d - drain current (a) i d - drain current (a) v gs ? gate voltage (v) -50 -25 0 25 50 75 100 125 150 0.4 0.6 0.8 1.0 1.2 1.4 1.6 v gs = 4.5 v v gs = 10 v r on @t j = 25 o c: 1.2 i d = 0.5 a 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 t j = 125 o c t j = 85 o c t j = 25 o c v gs = 4.5v t j = -55 o c 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 t j = 125 o c t j = 85 o c t j = 25 o c v gs = 10v t j = -55 o c 0123456 0.0 0.2 0.4 0.6 0.8 1.0 1.2 t j =125 o c t j =25 o c t j =-55 o c
leshan radio company, ltd. leshan radio company, ltd. lbss139wt1g sc - 70 a a2 d e1 b e e a1 c l 3 12 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 0.05 (0.002) 1.9 0.075 0.65 0.025 0.65 0.025 0.9 0.035 0.7 0.028 mm inches scale 10:1 xx m xx = specific device code m = date code = pb?free package generic marking diagram *this information is generic. please refer to device data sheet for actual part marking. pb?free indicator, ago or microdot a o, may or may not be present. 1 soldering footprint* h e dim a min nom max min millimeters 0.80 0.90 1.00 0.032 inches a1 0.00 0.05 0.10 0.000 a2 0.7 ref b 0.30 0.35 0.40 0.012 c 0.10 0.18 0.25 0.004 d 1.80 2.10 2.20 0.071 e 1.15 1.24 1.35 0.045 e 1.20 1.30 1.40 0.047 0.035 0.040 0.002 0.004 0.014 0.016 0.007 0.010 0.083 0.087 0.049 0.053 0.051 0.055 nom max l 2.00 2.10 2.40 0.079 0.083 0.095 h e e1 0.65 bsc 0.425 ref 0.028 ref 0.026 bsc 0.017 ref rev .a 6/6
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